2SB564A
2SB564A is PNP Transistor manufactured by Dc Components.
Description
Designed for low frequency power amplifier applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25o C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
..
.500 Min (12.70)
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating -30 -25 -5 -1 800 +150 -55 to +150
Unit V V V A m W o o 3 2 1 .050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
.148(3.76) .132(3.36)
Collector Current
Total Power Dissipation Junction Temperature Storage Temperature
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO
(1)
Min -30 -25 -5 70 2%
Typ 110 18
Max -100 -0.5 -1.2 400
- Unit V V V n A V V MHz p F
Test Conditions IC=-100µA, IE=0 IC=-10m A, IB=0 IE=-100µA, IC=0 VCB=-30V, IE=0 IC=-1A, IB=-100m A IC=-1A, IB=-100m A IC=-100m A, VCE=-1V IC=-10m A, VCE=-6V, f=100MHz VCB=-6V, f=1MHz
VCE(sat) VBE(sat) h FE f T Cob
380µs, Duty Cycle
Classification of h FE
Rank Range O 70~140 Y 120~240 GR...