• Part: 2SB564A
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 237.15 KB
Download 2SB564A Datasheet PDF
Dc Components
2SB564A
2SB564A is PNP Transistor manufactured by Dc Components.
Description Designed for low frequency power amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25o C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage .. .500 Min (12.70) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -30 -25 -5 -1 800 +150 -55 to +150 Unit V V V A m W o o 3 2 1 .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) .148(3.76) .132(3.36) Collector Current Total Power Dissipation Junction Temperature Storage Temperature .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min -30 -25 -5 70 2% Typ 110 18 Max -100 -0.5 -1.2 400 - Unit V V V n A V V MHz p F Test Conditions IC=-100µA, IE=0 IC=-10m A, IB=0 IE=-100µA, IC=0 VCB=-30V, IE=0 IC=-1A, IB=-100m A IC=-1A, IB=-100m A IC=-100m A, VCE=-1V IC=-10m A, VCE=-6V, f=100MHz VCB=-6V, f=1MHz VCE(sat) VBE(sat) h FE f T Cob 380µs, Duty Cycle Classification of h FE Rank Range O 70~140 Y 120~240 GR...