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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1213
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 50 50 4 500 400
+150 -55 to +150
Unit V V V mA
mW oC oC
TO-92
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 (12.70)
Min
2o Typ 2o Typ
.050 (1.27)Typ
.022(0.56) .014(0.36)
.100 (2.54)
Typ
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.050 5oTyp. 5oTyp. (1.