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DC COMPONENTS CO., LTD.
R
2SC1674
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70)
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 30 20 4 20 150 +150 -55 to +150 Unit V V V mA mW
o o
.050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
3 2 1
.148(3.76) .132(3.36)
.050 o o 5 Typ. 5 Typ. (1.