• Part: DC9013
  • Description: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 239.86 KB
Download DC9013 Datasheet PDF
Dc Components
DC9013
DC9013 is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description Designed for use in 1W output amplifier of portable redios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25o C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 40 20 5 500 100 625 +150 -55 to +150 Unit V V V m A m A m W o o 3 2 1 .050 Typ (1.27) .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 40 20 5 64 40 100 2% Typ 120 - Max 100 100 0.6 1.2 0.9 300 8 Unit V V V n A n A V V V MHz p F Test Conditions IC=100µA, IE=0 IC=1m A, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 IC=500m A, IB=50m A IC=500m A, IB=50m A IC=10m A, VCE=1V IC=50m A, VCE=1V IC=500m A, VCE=1V IC=10m A, VCE=1V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) VCE(sat) VBE(sat) VBE(on) h FE1 h FE2 f T Cob 380µs, Duty Cycle Classification of h FE1 Rank Range D 64~91 E 78~112 F 96~135 G 112~166 H 144~202 I 176~300 I1 176~246 I2...