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DMBT9012 - PNP Transistor

Description

Designed for low frequency amplifier applications.

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Datasheet Details

Part number DMBT9012
Manufacturer Dc Components
File Size 252.90 KB
Description PNP Transistor
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBT9012 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -40 -20 -5 -500 225 +150 -55 to +150 Unit V V V mA mW o o .026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) C .004 Max (0.10) .
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