Datasheet4U Logo Datasheet4U.com

DXT3906 Datasheet NPN Transistor

Manufacturer: Dc Components

Overview: .. DC PONENTS CO., LTD. R DXT3906 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR.

Datasheet Details

Part number DXT3906
Manufacturer Dc Components
File Size 261.73 KB
Description NPN Transistor
Datasheet DXT3906_DcComponents.pdf

General Description

Designed for general purpose switching and amplifier applications.

SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -40 -40 -5 -200 1 +150 -55 to +150 Unit V V V mA W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 Min -40 -40 -5 -0.65 60 80 100 60 30 250 - Typ - Max -50 -0.25 -0.4 -0.85 -0.95 300 4.5 Unit V V V nA V V V V MHz pF IC=-1mA Test Conditions IC=-100µA IE=-10µA VCE=-30V, VBE=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-100µA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-50mA, VCE=-1V IC=-100mA, VCE=-1V VCE=-20V, f=100MHz, IC=-10mA VCB=-5V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) hFE3 hFE4 hFE5 Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width fT Cob 380µs, Duty Cycle 2%

DXT3906 Distributor