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DXT5551 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

General Description

Designed for general purpose applications requiring high breakdown voltages.

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Datasheet Details

Part number DXT5551
Manufacturer Dc Components
File Size 261.75 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet DXT5551 Datasheet

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltages. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 180 160 6 500 1.2 +150 -55 to +150 Unit V V V mA W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.