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DY227 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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Designed for low frequency power amplifier applications.

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Part number DY227
Manufacturer Dc Components
File Size 236.81 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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    www.DataSheet4U.com DC COMPONENTS CO., LTD. R DY227 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 30 25 5 300 400 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.
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