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I882. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in out...
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OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-251 .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 Pinning 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG Rating 40 30 5 3 7 600 10 +1
I882 Datasheet