J882
J882 is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description
Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver.
TO-252(DPAK)
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) o .217(5.50) .205(5.20) .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45)
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o
C) Rating 40 30 5 3 7 600 10 +150 -55 to +150 Unit V V V A A m A W o o .035 Max (0.90)
Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG
2 .228(5.80) .213(5.40) 1 2 3 .059(1.50) .035(0.90)
.032 Max (0.80)
.110(2.80) .087(2.20) .091 Typ (2.30) .024(0.60) .018(0.45)
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) h FE1 h FE2 f T Cob 380µs, Duty Cycle 2%
Min 40 30 5 30 100
- Typ 0.3 1 90 45
Max 1 1 0.5 2 500
- Unit V V V µA µA V V MHz p F
Test Conditions IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20m A, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Classification of h FE2
Rank Range Q 100~200 P 160~320 E...