• Part: J882
  • Description: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 268.54 KB
Download J882 Datasheet PDF
Dc Components
J882
J882 is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-252(DPAK) Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) o .217(5.50) .205(5.20) .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o C) Rating 40 30 5 3 7 600 10 +150 -55 to +150 Unit V V V A A m A W o o .035 Max (0.90) Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG 2 .228(5.80) .213(5.40) 1 2 3 .059(1.50) .035(0.90) .032 Max (0.80) .110(2.80) .087(2.20) .091 Typ (2.30) .024(0.60) .018(0.45) Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) h FE1 h FE2 f T Cob 380µs, Duty Cycle 2% Min 40 30 5 30 100 - Typ 0.3 1 90 45 Max 1 1 0.5 2 500 - Unit V V V µA µA V V MHz p F Test Conditions IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20m A, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of h FE2 Rank Range Q 100~200 P 160~320 E...