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LB123D - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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Designed for high voltage, high speed switching circuits, and amplifier applications .

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Part number LB123D
Manufacturer Dc Components
File Size 244.22 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB123D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications . TO-126ML .163(4.12) .153(3.87) .146(3.70) .136(3.44) Pinning 1 = Emitter 2 = Collector 3 = Base .044(1.12) .034(0.87) .060(1.52) .050(1.27) .148(3.75) .138(3.50) .300(7.62) .290(7.37) 1 2 3 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .123(3.12) .113(2.
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