LB123D
LB123D is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description
Designed for high voltage, high speed switching circuits, and amplifier applications .
TO-126ML
.163(4.12) .153(3.87) .146(3.70) .136(3.44)
Pinning
1 = Emitter 2 = Collector 3 = Base
.044(1.12) .034(0.87) .060(1.52) .050(1.27)
.148(3.75) .138(3.50) .300(7.62) .290(7.37) 1 2 3
Absolute Maximum Ratings(TA=25o C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o
.123(3.12) .113(2.87)
Symbol VCBO VCEO VEBO IC IC PD TJ TSTG
Rating 600 400 8 1 2 30 +150 -55 to +150
Unit V V V A A W o o
.084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .084(2.14) .074(1.88)
.591(15.0) .551(14.0)
.180 Typ (4.56) .090 Typ (2.28)
.027(0.69) .017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 h FE1 h FE2 h FE3 380µs, Duty Cycle 2%
Min 600 400 8 10 10 6
Typ
- Max 10 10 0.8 0.9 1.2 1.8 50
- Unit V V V µA µA V V V V
- Test Conditions IC=1m A, IE=0 IC=10m A, IB=0 IE=1m A, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10m A IC=0.3A, IB=30m A IC=0.1A, IB=10m A IC=0.3A, IB=30m A IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1)
DC Current Gain
(1)
(1)Pulse Test: Pulse Width
Classification of h FE1
Rank Range B1 10~17 B2 13~22 B3 18~27 B4 23~32 B5 28~37 B6 33~42 B7 38~47 B8...
