LB123T
LB123T is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description
Designed for high voltage, high speed switching circuits, and amplifier applications .
Pinning
1 = Emitter 2 = Collector 3 = Base
.041(1.05) .037(0.95) .154(3.91) .150(3.81)
TO-126
.304(7.72) .285(7.52) .105(2.66) .095(2.41)
.055(1.39) .045(1.14)
.152(3.86) .138(3.50)
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o
C) Rating 600 400 8 1 2 3.5 30 +150 -55 to +150 Unit V V V A A W W o o
Symbol VCBO VCEO VEBO IC IC PD PD TJ TSTG
.279(7.09) .275(6.99) 1 2 3
3 Typ .052(1.32) .048(1.22) 3 Typ o o
.620(15.75) .600(15.25)
.032(0.81) .028(0.71) .189(4.80) .171(4.34)
.022 (0.55) Typ
3 Typ o
3 Typ Dimensions in inches and (millimeters) o
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 h FE1 h FE2 h FE3 380µs, Duty Cycle 2%
Min 600 400 8 10 10 6
Typ
- Max 10 10 0.8 0.9 1.2 1.8 50
- Unit V V V µA µA V V V V
- Test Conditions IC=1m A, IE=0 IC=10m A, IB=0 IE=1m A, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10m A IC=0.3A, IB=30m A IC=0.1A, IB=10m A IC=0.3A, IB=30m A IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1)
DC Current Gain
(1)
(1)Pulse Test: Pulse Width
Classification of h FE1
Rank Range B1 10~17 B2 13~22 B3 18~27 B4 23~32 B5 28~37 B6 33~42 B7 38~47 B8...
