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LB123T - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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Designed for high voltage, high speed switching circuits, and amplifier applications .

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Part number LB123T
Manufacturer Dc Components
File Size 213.84 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB123T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications . Pinning 1 = Emitter 2 = Collector 3 = Base .041(1.05) .037(0.95) .154(3.91) .150(3.81) TO-126 .304(7.72) .285(7.52) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o C) Rating 600 400 8 1 2 3.
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