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LB124E - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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Designed for high voltage, high speed switching circuits, and amplifier applications .

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Part number LB124E
Manufacturer Dc Components
File Size 220.29 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB124E DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications . TO-220AB .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 600 400 8 2 4 35 +150 -55 to +150 Unit V V V A A W o o .625(15.87) .570(14.48) 1 2 3 .350(8.90) .330(8.
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