• Part: LB125E
  • Description: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 220.10 KB
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Dc Components
LB125E
LB125E is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description Designed for lighting applications and switch mode power supplies . TO-220AB .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25o C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 600 400 9 5 8 40 +150 -55 to +150 Unit V V V A A W o o .625(15.87) .570(14.48) 1 2 3 .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 h FE1 Min 600 400 9 8 Typ - Max 100 100 0.5 0.7 1.1 1.1 1.2 35 - Unit V V V µA µA V V V V V - Test Conditions IC=1m A, IE=0 IC=10m A, IB=0 IE=10m A, IC=0 VCB=800V, IE=0 VCE=400V, IB=0 IC=1A, IB=0.2A IC=2A, IB=0.4A IC=3A, IB=0.75A IC=1A, IB=0.2A IC=2A, IB=0.4A IC=2A, VCE=5V IC=10m A, VCE=5V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) (1)Pulse Test: Pulse Width h FE2 10 380µs, Duty Cycle 2% Classification of h FE1 Rank Range B1 8~17 B2 15~21 B3 19~25 B4 23~31 B5...