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M28S - NPN EPITAXIAL PLANAR TRANSISTOR

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Description

Designed for use in general purpose "Speech Synthesizer" (Voice ROM) IC audio output driver stage amplifier applications.

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Datasheet Details

Part number M28S
Manufacturer Dc Components
File Size 211.11 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet M28S Datasheet
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    DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS M28S TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose "Speech Synthesizer" (Voice ROM) IC audio output driver stage amplifier applications. Pinning 3 = Emitter 1 = Collector 2 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 40 20 6 1.25 0.4 850 +150 -55 to +150 Unit V V V A A mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ (1.0.2570)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.
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