The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
MID112
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.
TO-251
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2
Pinning
1 = Base 2 = Collector 3 = Emitter
.022(0.55) .018(0.45) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.284(7.20) .268(6.80)
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 100 100 5 2 20 +150 -55 to +150
Unit V V V A W
o o .032 Max (0.80) .