Part MID122
Description NPN DARLINGTON TRANSISTOR
Category Transistor
Manufacturer Dc Components
Size 247.00 KB
Dc Components

MID122 Overview

Description

Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .063(1.60) .055(1.40) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .284(7.20) .268(6.80) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 100 100 5 8 20 +150 -55 to +150 Unit V V V A W o o .032 Max (0.80) .035 Max (0.90) 1 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) C .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on) hFE1 hFE2 Cob 380µs, Duty Cycle 2% Min 100 100 5 1K 100 - Typ 130 Max 10 10 2 2 4 4.5 2.8 12K - Unit V V V µA µA mA V V V V pF IC=1mA Test Conditions IC=30mA IE=1mA VCB=100V VCE=50V VEB=5V IC=4A, IB=16mA IC=8A, IB=80mA IC=8A, IB=80mA IC=4A, VCE=4V IC=4A, VCE=4V IC=8A, VCE=4V VCB=10V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width.