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MID31C - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

General Description

Designed for use in general purpose amplifier and switching applications.

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Datasheet Details

Part number MID31C
Manufacturer Dc Components
File Size 246.54 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet MID31C Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R MID31C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .284(7.20) .268(6.80) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 100 100 5 3 15 +150 -55 to +150 Unit V V V A W o o .032 Max (0.80) .035 Max (0.90) 1 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .