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MJD32C - PNP EPITAXIAL PLANAR TRANSISTOR

General Description

Designed for use in general purpose amplifier and switching applications.

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Datasheet Details

Part number MJD32C
Manufacturer Dc Components
File Size 242.08 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet MJD32C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -100 -100 -5 -3 15 +150 -55 to +150 Unit V V V A W oC oC TO-252(DPAK) .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45) 1 .035 (0.90) Max .032 Max (0.80) .228(5.80) .213(5.40) 23 .110(2.80) .087(2.20) .091 (2.30) Typ .