Datasheet Details
| Part number | MJD32C |
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| Manufacturer | Dc Components |
| File Size | 242.08 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | MJD32C-DcComponents.pdf |
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Overview: DC PONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR.
| Part number | MJD32C |
|---|---|
| Manufacturer | Dc Components |
| File Size | 242.08 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | MJD32C-DcComponents.pdf |
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Designed for use in general purpose amplifier and switching applications.
Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -100 -100 -5 -3 15 +150 -55 to +150 Unit V V V A W oC oC TO-252(DPAK) .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45) 1 .035 (0.90) Max .032 Max (0.80) .228(5.80) .213(5.40) 23 .110(2.80) .087(2.20) .091 (2.30) Typ .059(1.50) .035(0.90) .024(0.60) .018(0.45) Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol M
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJD32C | PNP Transistor | Diodes |
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MJD32C | Silicon PNP Power Transistor | Inchange Semiconductor |
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MJD32C | Silicon PNP epitaxial planer Transistors | MCC |
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MJD32C | Complementary Power Transistors | Kexin |
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MJD32C | COMPLEMENTARY PLASTIC POWER TRANSISTORS | CDIL |
| Part Number | Description |
|---|---|
| MJD117 | PNP DARLINGTON TRANSISTOR |