SD1020D Datasheet | Dc Components

FEATURES - - - - - - Metal to silicon rectifier majority carrier conduction Low power loss, High efficiency High current capability Low forward voltage drop High surge capacity For use in low voltage high frequency inverters, free wheeling, and polarity protection applications .405(10.3) .380(9.7) 2 .370(9.4) .330(8.4) 1 2 3 .055 Max (1.4) TO-263(D2 PAK) .190(4.8) .160(4.1) 6o~8o .055(1.4) .045(1.2) MECHANICAL DATA - Case: Molded plastic - Epoxy: UL 94V-0 rate flame retardant - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 - Mounting position: Any - Weight: 1.7 grams Approx. .625(15.9) .575(14.6) 6o~8o .110(2.8) .090(2.3) .070(1.8) .050(1.3) .055(1.4) .045(1.2) .100 Typ (2.5) 1 3 .039(1.0) .020(0.5) .029(0.7) .018(0.5) 0o~5o MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) SYMBOL SD1020D SD1030D SD1040D SD1050D SD1060D SD1080D SD10100D UNITS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T C=100o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at 5.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note1) Typical Junction Capacitance (Note 2) Storage Operating Temperature Range VRRM VRMS VDC IO I FSM VF IR R θJA CJ T J , T STG 20 14 20 30 21 30 40 28 40 50 35 50 10 150 60 42 60 80 56 80 100 70 100 Volts Volts Volts Amps Amps 0.65 5.0 100 80 700 Volts m Amps @T A = 25 o C @T A = 100 o C C/ W p...