Datasheet Summary
4G B Die DDRIII SDRAM Specification
Deutron Electronics Corp.
8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: (886)-2-2517-7768 FAX: (886)-2-2517-4575
P3P4GF4BLF (256M words x 16 bits)
Specifications
- Density: 4G bits
- Organization 32M words 16 bits 8 banks
- Package 96-ball FBGA Lead-free (RoHS pliant) and Halogen-free
- Power supply: VDD, VDDQ 1.5V 0.075V
- Data rate 1600Mbps/1333Mbps/1066Mbps (max.)
- 2KB page size Row address: A0 to A14 Column address: A0 to A9
- Eight internal banks for concurrent operation
- Interface: SSTL_15
- Burst lengths (BL): 8 and 4 with Burst Chop (BC)
- Burst type (BT): Sequential (8, 4 with BC) ...