DP10N60 - N-Channel MOSFET

Key Features

Low gate charge.
Crss ( 16.9pF) Low Crss (typical 16.9pF ).
Fast switching.
100% avalanche tested.
dv/dt Improved dv/dt capabilit.
RoHS RoHS product DP10N60 N N-.

DP10N60 n-channel mosfet by Developer Microelectronics - Datasheet Preview

Datasheet Details

Part number	DP10N60
Manufacturer	Developer Microelectronics
File Size	220.04 KB
Description	N-Channel MOSFET
Datasheet	DP10N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAIN CHARACTERISTICS ID 10 A VDSS 600 V Rdson-max （Vgs=10V） 0.85Ω Qg-Typ 51.5 nC APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED LED power supplies FEATURES  Low gate charge  Crss ( 16.9pF) Low Crss (typical 16.9pF )  Fast switching  100% avalanche tested  dv/dt Improved dv/dt capabilit  RoHS RoHS product DP10N60 N N-CHANNEL MOSFET Package ORDER MESSAGE Order codes DP10N60 Marking DP10N60 Package TO-220C Halogen Free YES Packaging Tube DP10N60_REV1.0_EN www.depuw.