DP4080 Datasheet PDF

FEATURES

● Uses CRM(CQ) advanced Trench MOS technology
● Extremely low on-resistance RDS(on)
● Excellent QgxRDS(on) product(FOM)
● Qualified according to JEDEC criteria

APPLICATIONS

● Motor control and drive
● Battery management
● UPS (Uninterrupible Power Supplies) DP4080 Trench N-MOSFET 40V, 6mΩ, 80A Product Summary Vds ID RDS(ON) typ(at VGS = 10V) RDS(ON) typ(at VGS = 4.5V) 40V 80A 6mΩ 8mΩ 100% DVDS Tested 100% Avalanche Tested

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol P-Channel Unit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous VDS 40 V VGS ±20 V ID 80 A Drain Current-Continuous(T=100℃) ID (100℃) 61 A Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID pulse 320 A Avalanche energy, single pulse (L=0.3mH, Rg=25Ω) EAS 145 mJ Power dissipation (TC = 25°C) Ptot 81 W Operating junction and storage temperature Thermal Resistance Tj , T stg Parameter Thermal resistance, junction – case. Thermal resistance, junction –ambient(min. foot...