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Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria
Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies)
DP4080
Trench N-MOSFET 40V, 6mΩ, 80A
Product Summary
Vds ID RDS(ON) typ(at VGS = 10V) RDS(ON) typ(at VGS = 4.5V)
40V 80A 6mΩ 8mΩ
100% DVDS Tested 100% Avalanche Tested
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
P-Channel
Unit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
VDS
40
V
VGS
±20
V
ID
80
A
Drain Current-Continuous(T=100℃)
ID (100℃)
61
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax)
ID pulse
320
A
Avalanche energy, single pulse (L=0.
DP4080 Datasheet
