SLG59H1313C
SLG59H1313C is 4.5A nFET Integrated Power Switch manufactured by Dialog Semiconductor.
A 23 mΩ, 4.5 A n FET Load Switch with Surge Protection and Adjustable OVP in a 2.34 mm2 WLCSP
General Description
The SLG59H1313C Features a low 23 mΩ RDSON internal n FET that protects low-voltage 2.5 Vdc to 5.5 Vdc operating systems against voltage faults up to 29 Vdc. An internal clamp circuit protects the downstream ponents from surge voltage up to 100 V. The SLG59H1313C Features a fast 50 ns (typ) over-voltage response time that turns off the internal n FET if the input voltage exceeds the OVP threshold. The OVP threshold is adjustable with optional external resistors to any voltage between 4 V and 20 V. Over-temperature protection powers down the device at 145°C (typ). SLG59H1313C also Features an Over-current protection that turns off the switch if the current exceeds 7 A (typ), this gives additional protection from over-heating the device.
SLG59H1313C incorporates an open-drain output PG pin. When VIN_min < VIN < VOVLO and the switch is on, PG will be driven low indicating a good power input, otherwise it is high impedance.
Features
- Pin-to-pin to FPF2280 with Improved Performance
- Surge protection (IEC61000-4-5: >100 V)
- Input maximum voltage rating: 29 Vdc
- Integrated low RDSON n FET switch: 23 mΩ (typ)
- 4.5 A continuous current capability
- Over-Voltage Protection (OVP): adjustable 4 V to 20 V
- Over-Temperature Protection (OTP): 145°C (typ)
- 7 A Over-Current Protection (OCP)
- Fast OVP turn-off response: typical 50 ns
- 1.3 mm x 1.8 mm in 12-ball WLCSP
- Pb-Free/Halogen-Free /ROHS pliant
Pin Configuration
Pin A1 Index Mark
OVLO PG
OUT OUT
GND GND GND
(Laser Marking View) 1.3 x 1.8 x 0.5 mm, 0.4 mm pitch
Applications
- Wearable Devices
- Tablet PCs and Smartphones
Block Diagram
CIN ≥ 0.57 µF
Multiple Contacts
R1 ≥ 1...