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2N6153 - SILICON BIDIRECTIONAL THYRISTORS

Download the 2N6153 datasheet PDF. This datasheet also covers the 2N6151 variant, as both devices belong to the same silicon bidirectional thyristors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
  • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6151-DigitronSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6153
Manufacturer Digitron Semiconductors
File Size 660.03 KB
Description SILICON BIDIRECTIONAL THYRISTORS
Datasheet download datasheet 2N6153 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6151-2N6153 High-reliability discrete products and engineering services since 1977 SILICON BIDIRECTIONAL THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Repetitive Peak Off-Stage Voltage, Gate Open 2N6151 2N6152 2N6153 VDRM 200 400 600 Unit Volts RMS On-State Current (TC = 80°C) Peak Non-Repetitive Surge Current (One Cycle, 60Hz) Circuit Fusing Considerations (t = 8.3ms) IT(RMS) ITSM I2t 10 Amps 100 Amps A2s 60 Peak Gate Power (TJ = 75°C, pulse width = 2.0µs) Average Gate Power (TJ = 75°C, t = 8.