• Part: 3N209
  • Description: DUAL GATE MOSFET VHF AMPLIFIER
  • Category: MOSFET
  • Manufacturer: Digitron Semiconductors
  • Size: 2.97 MB
Download 3N209 Datasheet PDF
Digitron Semiconductors
3N209
FEATURES - Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. - Available as non-Ro HS (Sn/Pb plating), standard, and as Ro HS by adding “-PBF” suffix. MAXIMUM RATINGS Drain - source voltage Drain gate voltage Rating Gate current Drain current - continuous Total power dissipation @ TA = 25°C Derate above 25°C Storage channel temperature range Operating channel temperature Lead temperature, 1/16” from seated surface for 10 s Symbol VDS VDG1 VDG2 IG1R IG1F IG2R IG2F ID Tstg Tchannel Value 25 -10 10 -10 10 3N210 300 1.71 -65 to 200 350 2.80 -65 to 175 200 150 ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic OFF CHARACTERISTICS Drain source breakdown voltage (ID = 10µAdc, VG1S = -4.0Vdc, VG2S = 4.0Vdc) Gate 1 - source forward breakdown voltage...