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MCR25N - SILICON CONTROLLED RECTIFIERS

Download the MCR25N datasheet PDF. This datasheet also covers the MCR25D variant, as both devices belong to the same silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MCR25D-DigitronSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MCR25N
Manufacturer Digitron Semiconductors
File Size 337.60 KB
Description SILICON CONTROLLED RECTIFIERS
Datasheet download datasheet MCR25N Datasheet

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Other Datasheets by Digitron Semiconductors

Part Number Description
MCR25D SILICON CONTROLLED RECTIFIERS
MCR25M SILICON CONTROLLED RECTIFIERS
MCR201 SILICON CONTROLLED RECTIFIERS
MCR202 SILICON CONTROLLED RECTIFIERS
MCR203 SILICON CONTROLLED RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DIGITRON SEMICONDUCTORS MCR25D, MCR25M, MCR25N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz) MCR25D MCR25M MCR25N Symbol VDRM VRRM Value 400 600 800 Unit V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 25 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) Circuit fusing consideration (t = 8.3ms) ITSM I2t 300 373 A A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) PGM 20 W Forward average gate power (t = 8.3ms, TC = 80°C) PG(AV) 0.