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MFE140
High-reliability discrete products and engineering services since 1977
DUAL GATE MOSFET
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS. Rating
Drain-source voltage Gate-source voltage Drain current Gate current Total device dissipation @ TA = 25°C Derate above 25°C Operating and storage temperature range
Symbol VDS VGS ID IG
PD
TJ, Tstg
Value 25 ±7.0 30 10
300
-65 to 175
Unit Vdc Vdc mAdc mAdc
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain source breakdown voltage (ID = 10µAdc, VS = 0, VG1 = -4.0Vdc, VG2 = 4.
MFE140 Datasheet
