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DTB6035
www.din-tek.jp
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 10 V 60
0.04 at V GS = 4.5 V
ID (A) 7 7
SOT-223 D
S D G
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage Gate-Source Voltage
VDS VGS
60 ± 20
Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID IDM
7 6.0 6.1 5.0
40
Avalanche Current
IAS 15
Single Pulse Avalanche Energy Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
EAS PD
11 3.3 1.7 2.3 1.
DTB6035 Datasheet
