DTK120N12 Datasheet | Din-Tek Semiconductor

FEATURES - Trench FET® Power MOSFET - New Package with Low Thermal Resistance - 100 % Rg Tested Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C Avalanche Current Repetitive Avalanche Energyb L = 0.1 m H Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C VDS VGS IDM IAR EAR TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)d Junction-to-Case (Drain) Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Symbol Rth JA Rth JC Limit 120 ± 20 128a 92a 410...