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DTL1N60 - Power MOSFET

Download the DTL1N60 datasheet PDF. This datasheet also covers the DTL1N60_Din variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Available in Tape and Reel.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC TO-220AB D DPAK (TO-252) D D IPAK (TO-251) G G S G D S G D S Top View S N-Channel MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTL1N60_Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTL1N60
Manufacturer Din-Tek
File Size 1.52 MB
Description Power MOSFET
Datasheet download datasheet DTL1N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DTL1N60/DTP1N60/DTU1N60 Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 8.1 Single 600 7 www.din-tek.jp FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC TO-220AB D DPAK (TO-252) D D IPAK (TO-251) G G S G D S G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID LIMIT 600 ± 20 1.4 0.89 0.28 0.020 93 1.4 3.6 36 2.5 3.8 - 55 to + 150 260d UNIT V A Pulsed Drain IDM5.