DTL4N65 Datasheet | Din-Tek Semiconductor

FEATURES - Low Gate Charge Qg Results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Ruggedness Available Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - pliant to Ro HS directive 2002/95/EC TO-220AB TO-220 FULLPAK TO-252 TO-251 GD S Top View GDS Top View GDS Top View GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d...