DTM4410 - N-Channel MOSFET

Din-Tek

Key Features

Halogen-free According to IEC 61249-2-21.
TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.

DTM4410 n-channel mosfet by Din-Tek - Datasheet Preview

Datasheet Details

Part number	DTM4410
Manufacturer	Din-Tek
File Size	348.13 KB
Description	N-Channel MOSFET
Datasheet	DTM4410 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DTM10-N	10A Bidirectional Thyristor	Sanyo Semicon Device
DTM10C-N	10A Bidirectional Thyristor	Sanyo Semicon Device
DTM10E-N	10A Bidirectional Thyristor	Sanyo Semicon Device
DTM10G-N	10A Bidirectional Thyristor	Sanyo Semicon Device
DTM12-N	12A Bidirectional Thyristor	Sanyo Semicon Device

Other Datasheets by Din-Tek

Part Number	Description
DTM4415	P-Channel 30-V (D-S) MOSFET
DTM4417	P-Channel MOSFET
DTM4407	P-Channel MOSFET
DTM4420	N-Channel MOSFET
DTM4420B	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 30-V (D-S) MOSFET DTM4410 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0045 at VGS = 10 V 30 0.0065 at VGS = 4.5 V ID (A)a 18 14.5 Qg (Typ.) 8 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Avalanche Energy L = 0.