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DTM4606BD
www.din-tek.jp
N- and P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel 30 0.018 at VGS = 10 V 0.024 at VGS = 4.5 V
P-Channel
- 30 0.036 at VGS = - 10 V 0.040 at VGS = - 4.5 V
ID (A)a 7.0 5.2 - 6.9 - 5.4
Qg (Typ.) 2.75
4.1
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1
8 D1
P-Channel
G1 2
7 D1
S2 3 G2 4
6 N-Channel
5
D2 D2
Top View
S1 G1
D2 G2
D1 P-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
7.0 - 6.