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DTM4606BD - N- and P-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 8 D1 P-Channel G1 2 7 D1 S2 3 G2 4 6 N-Channel 5 D2 D2 Top View S1 G1 D2 G2 D1 P-Channel MOSFET S2 N-Channel MOSFET.

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Datasheet Details

Part number DTM4606BD
Manufacturer Din-Tek
File Size 492.88 KB
Description N- and P-Channel MOSFET
Datasheet download datasheet DTM4606BD Datasheet
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DTM4606BD www.din-tek.jp N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 30 0.018 at VGS = 10 V 0.024 at VGS = 4.5 V P-Channel - 30 0.036 at VGS = - 10 V 0.040 at VGS = - 4.5 V ID (A)a 7.0 5.2 - 6.9 - 5.4 Qg (Typ.) 2.75 4.1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 8 D1 P-Channel G1 2 7 D1 S2 3 G2 4 6 N-Channel 5 D2 D2 Top View S1 G1 D2 G2 D1 P-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C 7.0 - 6.
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