DTM5106 Datasheet | Din-Tek Semiconductor

FEATURES - Trench FET® Power MOSFETS - 175 °C Junction Temperature - 100 % Rg Tested APPLICATIONS - Primary Side Switch S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle  1 %) L = 0.1 m H Maximum Power Dissipation TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 150 ± 20 6 4.7 25 5.2 4.5 11.3 62b 2.7a - 55 to 175 Unit V A m J W °C THERMAL RESISTANCE...