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P-Channel 60-V (D-S) MOSFET
DTM6601
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 60
RDS(on) () 0.024 at VGS = - 10 V 0.031 at VGS = - 4.5 V
ID (A)a - 10 -8
Qg (Typ.) 7.6 nC
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • Load Switch
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
DTM6601 Datasheet
