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P-Channel 20-V (D-S) MOSFET
DTM9425
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.042 at VGS = - 4.5 V - 20
0.054 at VGS = - 2.5 V
ID (A) - 6.6
- 4.4
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 6.6 - 4.6
- 4.1 - 3.2
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 2.3
- 1.1
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.5 1.6
1.3 0.
DTM9425 Datasheet
