DTN11N80SJ - N-Channel Super Junction Power MOSFET

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

Din-Tek

Datasheet Details

Part number	DTN11N80SJ
Manufacturer	Din-Tek
File Size	419.83 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	DTN11N80SJ Datasheet
Additional preview pages of the DTN11N80SJ datasheet.

📁 Similar Datasheet

DTN12 - 12A Bidirectional Thyristor (Sanyo Semicon Device)
DTN12E - 12A Bidirectional Thyristor (Sanyo Semicon Device)
DTN12G - 12A Bidirectional Thyristor (Sanyo Semicon Device)
DTN1A60 - Triacs (DnI)
DTN1A80 - Triacs (DnI)
DTN6 - 6A Bidirectional Thyristor (Sanyo Semicon Device)
DTN6E - 6A Bidirectional Thyristor (Sanyo Semicon Device)
DTN6G - 6A Bidirectional Thyristor (Sanyo Semicon Device)
DTN8 - 8A Bidirectional Thyristor (Sanyo Semicon Device)
DTN8E - 8A Bidirectional Thyristor (Sanyo Semicon Device)

Other Datasheets by Din-Tek

DTN11N50SJ - N-Channel Super Junction Power MOSFET
DTN11N70SJ - N-Channel Super Junction Power MOSFET
DTN10N80SJ - N-Channel Super Junction Power MOSFET
DTN10N90SJ - N-Channel Super Junction Power MOSFET
DTN14N50SJ - N-Channel Super Junction Power MOSFET
DTN15N70SJ - N-Channel Super Junction Power MOSFET
DTN15N80SJ - N-Channel Super Junction Power MOSFET
DTN20N50SJ - N-Channel Super Junction Power MOSFET

Full PDF Text Transcription

Click to expand full text

DTN11N80SJ/DTP11N80SJ/DTP11N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) max. at 25 °C (Ω) Qg max. (nC) VGS = 10 V 73 Qgs (nC) Qgd (nC) 9 17 Configuration Single 0.

Published: Jul 20, 2018 |