Datasheet4U Logo Datasheet4U.com

DTN20N60SJ - N-Channel Super Junction Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet Details

Part number DTN20N60SJ
Manufacturer Din-Tek
File Size 545.20 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet DTN20N60SJ Datasheet

More Datasheets from Din-Tek

Part Number Description
DTN20N65SJ N-Channel Super Junction Power MOSFET
DTN20N50SJ N-Channel Super Junction Power MOSFET
DTN20N70SJ N-Channel Super Junction Power MOSFET
DTN20N80SJ N-Channel Super Junction Power MOSFET
DTN10N80SJ N-Channel Super Junction Power MOSFET
DTN10N90SJ N-Channel Super Junction Power MOSFET
DTN11N50SJ N-Channel Super Junction Power MOSFET
DTN11N70SJ N-Channel Super Junction Power MOSFET
DTN11N80SJ N-Channel Super Junction Power MOSFET
DTN14N50SJ N-Channel Super Junction Power MOSFET

Full PDF Text Transcription for DTN20N60SJ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DTN20N60SJ. For precise diagrams, tables, and layout, please refer to the original PDF.

DTN20N60SJ/DTP20N60SJ/DTP20N60FSJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600 RDS(on) max. at 25 °C (Ω) Qg max....

View more extracted text
ODUCT SUMMARY VDS (V) at TJ max. 600 RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) VGS = 10 V 70 7.8 9 Configuration Single 0.