DTP10N80 Description
DTP10N80/DTP10N80F .din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 47 Qgs (nC) Qgd (nC) 11 20 Configuration Single 0.91 TO-220AB TO-220 FULLPAK.
DTP10N80 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)