DTP11N80FSJ - N-Channel Super Junction Power MOSFET

This page provides the datasheet information for the DTP11N80FSJ, a member of the DTP11N80SJ N-Channel Super Junction Power MOSFET family.

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

Din-Tek

📥 Download Datasheet

Datasheet Details

Part number	DTP11N80FSJ
Manufacturer	Din-Tek
File Size	419.83 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	DTP11N80FSJ Datasheet
Additional preview pages of the DTP11N80FSJ datasheet.

📁 Similar Datasheet

DTP190 - (DTP Series) Thyristor Transient Voltage Suppressor (Transpro Electronics)
DTP5N80FSJ - N-Channel 800V Power MOSFET (VBsemi)
DTP603048 - Polymer Li-ion Rechargeable Battery (DATA POWER TECHNOLOGY)
DTP6A60 - Triacs (DnI)
DTPA1074 - 80 Watt Flyback Transformer (ETC)
DTPxxx - (DTP Series) Thyristor Transient Voltage Suppressor (Transpro Electronics)

Other Datasheets by Din-Tek

DTP11N80SJ - N-Channel Super Junction Power MOSFET
DTP11N50FSJ - N-Channel Super Junction Power MOSFET
DTP11N50SJ - N-Channel Super Junction Power MOSFET
DTP11N6 - N-Channel Super Junction Power MOSFET
DTP11N60FSJ - N-Channel Super Junction Power MOSFET
DTP11N60SJ - N-Channel Super Junction Power MOSFET
DTP11N65FSJ - N-Channel Super Junction Power MOSFET
DTP11N70FSJ - N-Channel Super Junction Power MOSFET

Full PDF Text Transcription

Click to expand full text

DTN11N80SJ/DTP11N80SJ/DTP11N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) max. at 25 °C (Ω) Qg max. (nC) VGS = 10 V 73 Qgs (nC) Qgd (nC) 9 17 Configuration Single 0.

Published: Jul 20, 2018 |