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DTP22N20 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet preview – DTP22N20

Datasheet Details

Part number DTP22N20
Manufacturer Din-Tek
File Size 222.39 KB
Description N-Channel MOSFET
Datasheet download datasheet DTP22N20 Datasheet
Additional preview pages of the DTP22N20 datasheet.

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Full PDF Text Transcription

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N-Channel 200 V (D-S) MOSFET '731 ZZZGLQWHNMS PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0. at VGS = 10 V ID (A)  TO-220AB D FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.
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