DTP38N65SJ Description
DTP38N65SJ .din-tek.jp N-Channel 650 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 273 46 79 Single 0.106 TO-247AC D S D G G S N-Channel MOSFET.
DTP38N65SJ Key Features
- Low Figure-of-Merit (FOM) Ron x Qg
- Low Input Capacitance (Ciss)
- Reduced Switching and Conduction Losses
- Ultra Low Gate Charge (Qg)
- Avalanche Energy Rated (UIS)