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N-Channel 30 V (D-S) MOSFET
DTQ2200
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0014 at VGS = 10 V
0.0017 at VGS = 4.5 V
ID (A)a, e 65 50
Qg (Typ.) 75 nC
')1[ 7RS9LHZ
S
%RWWRP9LHZ D
D
D
S
Pin 1
D D G
Pin 1
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested • Typical ESD protection APPLICATIONS • Notebook PC Core • VRM/POL
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C ID
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
DTQ2200 Datasheet
