DTQ3100 Datasheet | Din-Tek Semiconductor

FEATURES - DT-Trench Power MOSFET - 15J DQG8,67HVWHG - Low Gate Charge - Logic Level Driven APPLICATIONS ‡ AC-DC/DC-DC Converter ‡ Cell Phone Quick Charger S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Single Avalanche Energy Maximum Power Dissipation c Operating Junction and Storage Temperature Ran ge TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM EAS PD TJ, Tstg LIMIT 100 ± 20 48 36.5 178 175 84 32.1 - 55 to + 150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient (PCB Mount) d Junction-to-Case (Drain) t  10 s Steady State Rth JA Rth JC 22 1.78 °C/W Notes a. Calculated continuous current based on maximum allowablejunction temperature. b. Repetitive rating; pulse width limited by max. junction temperature. c. Pd is based on max. junction temperature, using junction-case thermal resistance. d. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,in a still air environment with Ta=25 °C. Rev. 1.0 .din-tek.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT...