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'7 4SJ
ZZZGLQWHNMS
N-Channel 100 V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (m)(Typ.)
100
6 at VGS = 10 V
10.5 at VGS = 4.5 V
ID (A)a 55 40
Top View
')1; Bottom View
PIN1
Qg (Typ.) 27 nC
FEATURES • TrenchFET II Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial
D
Top View
1
8
2
7
3
6
4
5
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
TC = 25 °C
55
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
38
15.6b, c
12.
DTQ6008SJ Datasheet
