DTS2012 Overview
N-Channel 20 V (D-S) MOSFET DTS2012 .din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.041 at VGS = 2.5 V 0.046 at VGS = 1.8 V ID (A)a 4 3 2 Qg (Typ.) 4 nC SOT-323 G1 3D S2 Top View G.
DTS2012 Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- Typical ESD Protection 2000 V HBM
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC