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New
N-Channel 20 V (D-S) MOSFET
DTS2306
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 20
RDS(on) () 0.020 at VGS = 4.5 V 0.025 at VGS = 2.5 V
ID (A) 6.5 4.6
Qg (Typ.) 10
FEATURES • TrenchFET® Power MOSFET
APPLICATIONS
• Load Switching for Portable Devices • DC/DC Converter
(SOT-23)
G1 S2
3D
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
VGS ID
±8 6.5 4.6 5.2 3.1
Pulsed Drain Currentb
IDM 30
Continuous Source Current (Diode Conduction)a
IS 0.92 0.7
Power Dissipationa
TA = 25 °C TA = 70 °C
PD
1.46 0.85 0.95 0.
DTS2306 Datasheet
