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DTS2318 - N-Channel MOSFET

Download the DTS2318 datasheet PDF. This datasheet also covers the DTS2318-Din variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTS2318-Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTS2318
Manufacturer Din-Tek
File Size 395.01 KB
Description N-Channel MOSFET
Datasheet download datasheet DTS2318 Datasheet

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Other Datasheets by Din-Tek

Part Number Description
DTS2312 N-Channel MOSFET
DTS2314 N-Channel MOSFET
DTS2315 P-Channel MOSFET
DTS2319 P-Channel MOSFET
DTS2300A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 20-V (D-S) MOSFET DTS www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0095 at VGS = 10 V 20 0.0105 at VGS = 4.5 V ID (A)a, g 12 10 Qg (Typ.) 7.3 nC (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Conversion • POL ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.