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DTS2318 - N-Channel MOSFET

This page provides the datasheet information for the DTS2318, a member of the DTS2318-Din N-Channel MOSFET family.

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet preview – DTS2318

Datasheet Details

Part number DTS2318
Manufacturer Din-Tek
File Size 395.01 KB
Description N-Channel MOSFET
Datasheet download datasheet DTS2318 Datasheet
Additional preview pages of the DTS2318 datasheet.

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Full PDF Text Transcription

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N-Channel 20-V (D-S) MOSFET DTS www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0095 at VGS = 10 V 20 0.0105 at VGS = 4.5 V ID (A)a, g 12 10 Qg (Typ.) 7.3 nC (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Conversion • POL ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.
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