DTS3606 Datasheet | Din-Tek Semiconductor

FEATURES - +DORJHQIUHH$FFRUGLQJWR,(& 'HILQLWLRQ - Trench FET® Power MOSFET - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC G1 3 mm S2 G2 7623 7RS9LHZ 16 25 34 2.85 mm D1 S1 D2 D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted 3DUDPHWHU 6PERO 1&KDQQHO 3&KDQQHO Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C VGS ID ± 20 . .0 ± 20 - . - .2 Pulsed Drain Current IDM 8 -7 Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C 1.15 0.73 Operating Junction and Storage...